Wellesley, MA, United States of America

Robert J Mears

This inventor holds 93 USPTO granted patents and 35 published patent applications, plus 3 CIPO patents and 21 EPO patents, primarily in Semiconductor Devices (CPC class H01L29-152). Top assignees: Atomera Incorporated, Rj Mears, LLC, Mears Technologies, Inc.. Active years: 2004-2026.

USPTO Granted Patents = 93 

% Patents Active = 98.9


 

Average Co-Inventor Count = 3.2

ph-index = 50

Forward Citations = 6,142(Granted Patents)

Forward Citations (Not Self Cited) = 3,050(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 2004-2026

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Areas of Expertise:
Superlattice
RF Devices
FINFET
Contact Resistance
Hyper-Abrupt Junction
Defect Densities
Vertical Semiconductor
Varactor
Dopant Diffusion
Enhanced Contact Structures
Thermal Stability
Semiconductor Materials
93 patents (USPTO):Explore Patents

Title: Robert J. Mears: Innovator in Semiconductor Technology

Introduction

Robert J. Mears, based in Wellesley, MA, is a prolific inventor known for his contributions to semiconductor technology, holding an impressive total of 89 patents. His work has significantly advanced the field, particularly in the methods of creating superlattices and gate-all-around devices.

Latest Patents

Among his latest inventions, Robert has patented a "Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities." This process includes forming first and second superlattices adjacent to a semiconductor layer, incorporating layers of both semiconductor and non-semiconductor materials. The innovation stands out for allowing enhanced thermal stability of the second superlattice compared to the first, ultimately optimizing semiconductor device functionality.

Another notable patent is the "Method for making gate-all-around (GAA) device including a superlattice." This invention describes a method for fabricating a GAA device by establishing source and drain regions on a semiconductor substrate and integrating semiconductor nanostructures. The inclusion of superlattices within the nanostructures demonstrates Robert's commitment to advancing semiconductor performance and efficiency.

Career Highlights

Robert Mears has had an influential career in the semiconductor sector, notably working with companies like Atomera Incorporated and R.J. Mears, LLC. His dedication to research and innovation has equipped him with extensive knowledge in semiconductor fabrication techniques and materials science.

Collaborations

Throughout his career, Robert has collaborated with esteemed colleagues, including Marek Hytha and Robert John Stephenson. These partnerships have fostered a creative and innovative environment, leading to significant advancements in various semiconductor technologies.

Conclusion

Robert J. Mears exemplifies innovation in the semiconductor industry through his numerous inventions and collaborations. His contributions to semiconductor superlattices and GAA devices highlight his enduring impact on technology and his commitment to pushing the boundaries of what is possible in semiconductor development.

Profile summary based on public USPTO records.
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