The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
May. 03, 2023
Atomera Incorporated, Los Gatos, CA (US);
Richard Stephen Roy, Lago Vista, TX (US);
Robert J. Mears, Wellesley, MA (US);
Atomera Incorporated, Los Gatos, CA (US);
Abstract
A dynamic random access memory (DRAM) device may include an array of DRAM cells, with each DRAM cell configured to store a high logic voltage and a low logic voltage. The DRAM device may further include a precharge circuit configured to selectively provide a first reference voltage and a second reference voltage to a first line and a second line, respectively, and a sense amplifier comprising a cross-coupled transistor sensing circuit coupled between the first line and second line. The sense amplifier may include at least one transistor including a superlattice channel. The DRAM device may further include a refresh circuit configured to selectively couple a third reference voltage to a corresponding DRAM cell via the first line and based upon a voltage difference between the first line and the second line, with the third reference voltage being greater than the high logic voltage of the DRAM cell.