Enter assignee name

Forward Citations = 13

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6 inventors (with patents filed for the assignee):

Paul A Clifton (24 out of 57 patents)

Andreas Goebel (20 out of 40 patents)

R Stockton Gaines (12 out of 35 patents)

4. Walter A Harrison (10 out of 14 patents)

5. Daniel E Grupp (6 out of 44 patents)

6. Daniel J Connelly (6 out of 53 patents)

30 patents: Sort by Forward Citations

1. 12477776 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2025-11-18),

2. 12402365 - SOI wafers and devices with buried stressors (2025-08-26),

3. 12336263 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2025-06-17),

4. 12034078 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2024-07-09),

5. 11978800 - Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer (2024-05-07),

6. 11843040 - MIS contact structure with metal oxide conductor (2023-12-12),

7. 11804533 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2023-10-31),

8. 11791411 - Relating to SOI wafers and devices with buried stressors (2023-10-17),

9. 11728624 - Tensile strained semiconductor photon emission and detection devices and integrated photonics system (2023-08-15),

10. 11610974 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2023-03-21),

11. 11476364 - Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer (2022-10-18),

12. 11462643 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2022-10-04),

13. 11355613 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2022-06-07),

14. 11322615 - SOI wafers and devices with buried stressor (2022-05-03),

15. 11271370 - Tensile strained semiconductor photon emission and detection devices and integrated photonics system (2022-03-08),

Acorn Semi, LLC is a semiconductor manufacturing company specializing in the production of advanced microchips. We offer a wide range of integrated circuits (ICs) that power various electronic devices, from smartphones and tablets to automotive systems and industrial equipment. With a focus on innovation and quality, our team of experts delivers cutting-edge solutions that meet the demanding requirements of the modern tech industry. Visit our website to learn more about Acorn Semi and explore our product portfolio.

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Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

30 Patents

#67 in Palo Alto, CA

#2,590 in California

#10,860 in US

#21,192 in the World

Palo Alto, CA, United States of America

Acorn Semi, LLC