The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Nov. 10, 2020
Acorn Semi, Llc, Palo Alto, CA (US);
Paul A. Clifton, Redwood City, CA (US);
Andreas Goebel, Mountain View, CA (US);
Acorn Semi, LLC, Palo Alto, CA (US);
Abstract
An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10-10Ω-cmwhen the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×10cmand less than approximately 10Ω-cmwhen the doping in the semiconductor adjacent the MIS contact is greater than approximately 10cm.