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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Walter A Harrison

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 23(Granted Patents)


Company Filing History:

goldMedal10 out of 30 
 
Acorn Semi, LLC
 patents
silverMedal4 out of 78 
 
Acorn Technologies, Inc.
 patents

Years Active: 2016-2025

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14 patents (USPTO):Explore Patents
1. 12477776 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2025-11-18),
2. 12336263 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2025-06-17),
3. 12034078 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2024-07-09),
4. 11804533 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2023-10-31),
5. 11610974 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2023-03-21),
6. 11462643 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2022-10-04),
7. 10879366 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2020-12-29),
8. 10833199 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2020-11-10),
9. 10505047 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2019-12-10),
10. 10505005 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2019-12-10),
11. 10170627 - Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height (2019-01-01),
12. 9755038 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2017-09-05),
13. 9484426 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2016-11-01),
14. 9362376 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2016-06-07),

Title: The Innovative Mind of Walter A Harrison

Introduction: Walter A Harrison, a distinguished inventor based in Palo Alto, CA, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Walter A Harrison's latest patents include cutting-edge advancements in artificial intelligence, renewable energy technologies, and sustainable materials.

Career Highlights: With over two decades of experience in the industry, Walter A Harrison has a proven track record of developing revolutionary solutions that have reshaped the way we interact with technology. His work has been instrumental in driving progress and pushing the boundaries of what is possible in the modern world.

Collaborations: Throughout his career, Walter A Harrison has collaborated with leading tech companies, research institutions, and universities to bring his innovative ideas to life. His ability to work across disciplines and bring together diverse teams has been key to his success in the field of invention.

Conclusion: Walter A Harrison's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology. His contributions have left an indelible mark on the industry, and his legacy will undoubtedly endure for years to come.

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