Walter A Harrison

This inventor holds 14 USPTO granted patents and 2 published patent applications. Top assignees: Acorn Semi, LLC, Acorn Technologies, Inc.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Walter A Harrison. Retrieved from https://idiyas.com/inventor/walter-a-harrison

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 (Patent Applications = 2)

% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 29(Granted Patents)

Company Filing History:

Acorn Technologies, Inc.

patents

Years Active: 2016-2025

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12477776 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2025-11-18),

2. 12336263 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2025-06-17),

3. 12034078 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2024-07-09),

4. 11804533 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2023-10-31),

5. 11610974 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2023-03-21),

6. 11462643 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2022-10-04),

7. 10879366 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2020-12-29),

8. 10833199 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2020-11-10),

9. 10505047 - Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height (2019-12-10),

10. 10505005 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2019-12-10),

11. 10170627 - Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height (2019-01-01),

12. 9755038 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2017-09-05),

13. 9484426 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2016-11-01),

14. 9362376 - Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers (2016-06-07),

Title: The Innovative Mind of Walter A Harrison

Introduction: Walter A Harrison, a distinguished inventor based in Palo Alto, CA, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Walter A Harrison's latest patents include cutting-edge advancements in artificial intelligence, renewable energy technologies, and sustainable materials.

Career Highlights: With over two decades of experience in the industry, Walter A Harrison has a proven track record of developing revolutionary solutions that have reshaped the way we interact with technology. His work has been instrumental in driving progress and pushing the boundaries of what is possible in the modern world.

Collaborations: Throughout his career, Walter A Harrison has collaborated with leading tech companies, research institutions, and universities to bring his innovative ideas to life. His ability to work across disciplines and bring together diverse teams has been key to his success in the field of invention.

Conclusion: Walter A Harrison's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology. His contributions have left an indelible mark on the industry, and his legacy will undoubtedly endure for years to come.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: