Pacific Palisades, CA, United States of America

R Stockton Gaines

This inventor holds 36 USPTO granted patents and 5 published patent applications, primarily in Strained Semiconductors. Top assignees: Acorn Technologies, Inc., Acorn Semi, LLC, Purchased Patent Management LLC. Active years: 1999-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: R Stockton Gaines. Retrieved from https://idiyas.com/inventor/r-stockton-gaines

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 340(Granted Patents)


Location History:

  • Los Angeles, CA (US) (2010)
  • Santa Monica, CA (US) (2016 - 2023)
  • Pacific Palisades, CA (US) (1999 - 2024)

Company Filing History:


Years Active: 1999-2026

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Areas of Expertise:
Strained Semiconductor
Elastic Edge Relaxation
Buried Insulating Layer
Photon Emission
Group IV Semiconductors
Interfacial Atomic Monolayers
Integrated Photonics
Tensile Strained
Field Effect Transistors
Dynamic Servo Signal
Adaptive Filters
Magnetic Disc Drive
36 patents (USPTO):Explore Patents

Title: Innovations by R Stockton Gaines: A Leader in Semiconductor Patents

Introduction

R Stockton Gaines, based in Pacific Palisades, CA, is a prolific inventor with a remarkable portfolio of 34 patents. His work primarily focuses on advancements in semiconductor technology, where he has contributed significant innovations aimed at improving electronic devices and systems.

Latest Patents

Among his latest patents, two stand out prominently. The first is entitled "Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer." This invention details a unique structure of a silicon-on-insulator (SOI) wafer that incorporates a compressively stressed buried insulator. The process involves the layering of silicon oxide and silicon nitride, leading to the formation of MOS transistors with enhanced performance through carefully designed stress-inducing structures. The second groundbreaking patent involves "Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers." This technique aims to minimize contact resistance in metal-semiconductor junctions, which can be crucial for a range of electronic and optoelectronic applications, including transistors, lasers, and solar cells.

Career Highlights

Throughout his career, R Stockton Gaines has been associated with prominent companies such as Acorn Technologies, Inc. and Acorn Semi, LLC. His role in these organizations has allowed him to develop and refine his concepts, leading to the creation of innovative technologies that have the potential to redefine semiconductor manufacturing and applications.

Collaborations

R Stockton Gaines has collaborated with esteemed professionals in the field, notably Paul A Clifton and Andreas Goebel. These collaborations have enriched his work, fostering an exchange of ideas that has led to the advancement of various semiconductor technologies.

Conclusion

R Stockton Gaines continues to be a significant contributor to the field of semiconductor innovations. His extensive patent portfolio and collaborations position him as a key player in driving advancements that will shape the future of electronics and optoelectronics. With a dedication to innovation, Gaines’ work not only showcases his ingenuity but also promises to have lasting impacts on technology and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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