Shizuoka, Japan

Akinori Seki

This inventor holds 26 USPTO granted patents and 2 published patent applications and 4 EPO patents, primarily in Silicon Carbide Semiconductors. Top assignees: Toyota Jidosha Kabushiki Kaisha, Sharp Kabushiki Kaisha Corporation, Japan Fine Ceramics Center. Active years: 1991-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akinori Seki. Retrieved from https://idiyas.com/inventor/akinori-seki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 69.2

 

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 136(Granted Patents)


Location History:

  • Nara, JP (1991)
  • Kitakatsuragi, JP (1991)
  • Sunto-gun, JP (2014)
  • Shizuoka, JP (2011 - 2017)
  • Shizuoka-ken, JP (2010 - 2018)
  • Suntoh-gun, JP (2018)
  • Toyota, JP (1992 - 2022)

Company Filing History:


Years Active: 1991-2022

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Areas of Expertise:
Single-Crystal Diamond
SiC Crystal Production
Gettering Process
P-Type SiC
N-Type SiC
Ohmic Electrode
Epitaxial SiC
Semiconductor Laser
MOSFET
Compound Semiconductor
Silicon Carbide Device
26 patents (USPTO):Explore Patents

Title: Akinori Seki: Pioneering Innovator in Semiconductor Technology

Introduction

Akinori Seki, a remarkable inventor based in Shizuoka-ken, Japan, has made significant contributions to the field of semiconductor technology. With a total of 26 patents to his name, Seki has demonstrated an unwavering commitment to innovation and excellence, particularly through his latest developments in materials science.

Latest Patents

Akinori Seki's latest patents reflect his expertise and forward-thinking approach. One of his noteworthy inventions is the "Stack comprising single-crystal diamond substrate." This patent presents a stack that includes at least a semiconductor drift layer stacked on a single-crystal diamond substrate featuring a coalescence boundary. The unique aspect of this invention is that the coalescence boundary is defined by its distinctive properties observed through Raman spectroscopy. This boundary exhibits a full width at half maximum of the peak near 1332 cm, which is notably broader than that seen in other regions, with its width being 200 µm or more.

Another significant patent is the "Production method of SiC crystal," which details a novel technique for vapor-growing an N-doped SiC crystal on an SiC substrate. This method involves supplying a raw material gas containing silicon, carbon, and nitrogen, where the substrate is enhanced by the deposition or implantation of lanthanum, cerium, or titanium.

Career Highlights

Throughout his career, Akinori Seki has worked with prestigious companies, including Toyota Motor Corporation and Sharp Corporation. His experience in these prominent organizations has allowed him to refine his skills and contribute to cutting-edge technologies in semiconductor applications, solidifying his reputation as a leading inventor.

Collaborations

In addition to his personal achievements, Seki has collaborated with esteemed colleagues such as Toyokazu Ohnishi and Yasuo Takahashi. These partnerships have likely provided a platform for brainstorming innovative ideas and advancing the principles of semiconductor technology.

Conclusion

Akinori Seki’s contributions to the semiconductor field through his patents and collaborative efforts exemplify the spirit of innovation. As he continues to drive advancements in this crucial area of technology, Seki remains a quintessential figure to watch in the ever-evolving landscape of inventions. His work not only influences the semiconductor industry but also paves the way for future discoveries and applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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