Toyota Jidosha Kabushiki Kaisha

Sharp Kabushiki Kaisha Corporation

Japan Fine Ceramics Center

National Institute of Advanced Industrial Science and Technology

Osaka University

Kyoto University

Denso Corporation

Akinori Seki

Toyokazu Ohnishi

Yasuo Takahashi

Masahiro Sugimoto

Akira Kawahashi

Masakatsu Maeda

Hiroaki Saitoh

Jiro Nakano

Noriyoshi Shibata

Yukari Tani

Toshio Hata

Sadayoshi Matsui

Takahiro Suyama

Hiroyuki Hosoba

Masayoshi Koba

Tsunenobu Kimoto

Jun Kudo

Katsunori Danno

Fumihiro Konushi

Yasuyuki Fujiwara

Haruhisa Takiguchi

Hiroaki Kudo

Hiroyuki Kano

Toshiyuki Okumura

Masafumi Kondo

Takahide Sugiyama

Kazuyoshi Tomita

Kazuhiko Inoguchi

Satoshi Sugahara

Akiyoshi Chayahara

Yoshiaki Mokuno

Hideaki Yamada

Chitose Nakanishi

Hitoshi Umezawa

Nobuteru Tsubouchi

Shinya Ohmagari

Yoichiro Kawai

Hiroshi Nakatu

Fumihiro Knoushi

Masafumi Kondou

Yukari Ishikawa

Fumiaki Kawai

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cmdue to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 &#x3bc;m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Stack comprising single-crystal diamond substrate

A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate on which La, Ce or Ti is deposited in part or whole of the surface or an SiC substrate in which La, Ce or Ti ion is implanted into part or whole of the surface.

Production method of SiC crystal

A method for producing a SiC single crystal substrate that can remove Cr impurity from the surface of a SiC single crystal that contains Cr as an impurity, is provided. This is achieved by a method for producing a SiC single crystal substrate, wherein the method includes a step of immersing a SiC single crystal substrate containing Cr as an impurity in hydrochloric acid at 50&#xb0; C. to 80&#xb0; C.

Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid

A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Method of production of sic single crystal

A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.

Gettering process for producing semiconductor device

A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal.

Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of same

An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a TiSiCternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35&#x2266;y&#x2266;0.5), an expression y=&#x2212;1.120x+0.5200 (0.1667&#x2266;x&#x2266;0.375), an expression y=1.778(x&#x2212;0.375)+0.1 (0&#x2266;x&#x2266;0.375) and an expression y=&#x2212;2.504x&#x2212;0.5828x+0.5 (0&#x2266;x&#x2266;0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.

Ohmic electrode and method of forming the same

A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.

Semiconductor device and manufacturing method of semiconductor device

In a method for growing a p-type SiC semiconductor single crystal on a SiC single crystal substrate, using a first solution in which C is dissolved in a melt of Si, a second solution is prepared by adding Al and N to the first solution such that an amount of Al added is larger than that of N added, and the p-type SiC semiconductor single crystal is grown on the SiC single crystal substrate from the second solution. A p-type SiC semiconductor single crystal is provided which is grown by the method as described above, and which contains 1&#xd7;10cmof Al and 2&#xd7;10to 7&#xd7;10cmof N as impurities.

Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal

A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)&#x2267;5&#xd7;10/cm; and 0.01%&#x2266;(Concentration of Ti)/(Concentration of Al)&#x2266;20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)&#x2267;5&#xd7;10/cm; and 1&#xd7;10/cm&#x2266;(Concentration of Ti)&#x2266;1&#xd7;10/cm.

P-type SiC semiconductor

The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate.

Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same

A channel layer () for forming a portion of a carrier path between a source electrode () and a drain electrode () is formed on a drift layer (). The channel layer () includes Ge granular crystals formed on the drift layer (), and a cap layer covering the Ge granular crystals.

Silicon carbide semiconductor device and method for manufacturing the same

A method of forming an Ohmic contact on a P-type 4H&#x2014;SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H&#x2014;SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H&#x2014;SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H&#x2014;SiC substrate formed by this method is also provided.

Method of forming an OHMIC contact on a P-type 4H-SIC substrate

A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form AlTi, and the second temperature is the minimum temperature of a temperature zone at which the AlTi reacts with SiC to form TiSiC. As a result of this maintaining of temperature step, an AlTi-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the AlTi-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with AlTi of the AlTi-layer to form a TiSiC-layer on the surface of the SiC substrate.

Semiconductor devices and manufacturing method thereof

A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n&#x2267;0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R=(I/I)&#x3e;0.2, wherein I(I) is an integrated intensity of a C1s signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I(I) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiC(x&#x3e;1), or SiCH(y&#x3c;1) (in the region of 284.5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).

Method of forming epitaxial SiC using XPS characterization

Growing community of inventors

Shizuoka-ken, Japan

Akinori Seki