The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Aug. 04, 2010
Akinori Seki, Sunto-gun, JP;
Masahiro Sugimoto, Toyota, JP;
Akira Kawahashi, Komaki, JP;
Yasuo Takahashi, Suita, JP;
Masakatsu Maeda, Suita, JP;
Akinori Seki, Sunto-gun, JP;
Masahiro Sugimoto, Toyota, JP;
Akira Kawahashi, Komaki, JP;
Yasuo Takahashi, Suita, JP;
Masakatsu Maeda, Suita, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a TiSiCternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)+0.1 (0≦x≦0.375) and an expression y=−2.504x−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.