The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
May. 04, 2012
Katsunori Danno, Susono, JP;
Hiroaki Saitoh, Okazaki, JP;
Akinori Seki, Shizuoka-ken, JP;
Tsunenobu Kimoto, Kyoto, JP;
Katsunori Danno, Susono, JP;
Hiroaki Saitoh, Okazaki, JP;
Akinori Seki, Shizuoka-ken, JP;
Tsunenobu Kimoto, Kyoto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Kyoto University, Kyoto-shi, Kyoto, JP;
Abstract
A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.