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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9508802 B1

PDFFull Text
Expired
Date of Patent:
Nov. 29, 2016

Filed:

May. 04, 2012

Gettering process for producing semiconductor device

Applicants:

Katsunori Danno, Susono, JP;

Hiroaki Saitoh, Okazaki, JP;

Akinori Seki, Shizuoka-ken, JP;

Tsunenobu Kimoto, Kyoto, JP;

Inventors:

Katsunori Danno, Susono, JP;

Hiroaki Saitoh, Okazaki, JP;

Akinori Seki, Shizuoka-ken, JP;

Tsunenobu Kimoto, Kyoto, JP;

Assignees:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Kyoto University, Kyoto-shi, Kyoto, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, LLP

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/16 (2006.01); H01L 21/322 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02529 (2013.01); H01L 21/046 (2013.01); H01L 21/322 (2013.01); H01L 21/324 (2013.01); H01L 29/868 (2013.01); H01L 29/872 (2013.01); H01L 21/263 (2013.01); H01L 21/26506 (2013.01);
Abstract

A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.

Find Patent Forward Citations

Danno, Katsunori. (2016). Gettering process for producing semiconductor device (U.S. Patent No. 9508802). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9508802

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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