Tsunenobu Kimoto

USPTO Granted Patents = 24 (Patent Applications = 7)

EPO Patents = 8 (Patent Applications = 4)

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 489(Granted Patents)

Location History:

Hyogo, JP (1993)
Itami, JP (1992 - 1995)
Kyoto, JP (2003 - 2024)

Company Filing History:

11 out of 10,264

Sumitomo Electric Industries, Limited

Toyota Jidosha Kabushiki Kaisha

Tokyo Electron Limited

8. 2 out of 832,880

Other

patents

where one patent can have more than one assignee

Years Active: 1992-2025

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24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12396230 - SiC semiconductor device manufacturing method and SiC semiconductor device (2025-08-19),

2. 11996449 - Semiconductor device with carbon-density-decreasing region (2024-05-28),

3. 11725301 - Method for manufacturing crystal for synthetic gem (2023-08-15),

4. 11502172 - Semiconductor device with carbon-density-decreasing region (2022-11-15),

5. 9508802 - Gettering process for producing semiconductor device (2016-11-29),

6. 9190482 - Method of production of SiC semiconductor device (2015-11-17),

7. 8696814 - Film deposition apparatus and film deposition method (2014-04-15),

8. 8399888 - P-type SiC semiconductor (2013-03-19),

9. RE43840 - Silicon carbide semiconductor device (2012-12-03),

10. 7671388 - Lateral junction field effect transistor and method of manufacturing the same (2010-03-02),

11. 7671387 - Lateral junction field effect transistor and method of manufacturing the same (2010-03-02),

12. 7528426 - Lateral junction field-effect transistor (2009-05-05),

13. 7420232 - Lateral junction field effect transistor and method of manufacturing the same (2008-09-02),

14. 7321142 - Field effect transistor (2008-01-22),

15. 7241694 - Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate (2007-07-10),

Title: The Innovations of Tsunenobu Kimoto: A Pioneer in Semiconductor Technology

Introduction: Tsunenobu Kimoto, a prominent inventor based in Kyoto, Japan, has made significant contributions to the field of semiconductor technology with an impressive portfolio of 23 patents. His work focuses primarily on the development of advanced semiconductor devices and the methods for producing synthetic gemstones.

Latest Patents: Among his recent innovations, Kimoto has developed a semiconductor device featuring a carbon-density-decreasing region. This device incorporates a silicon carbide (SiC) semiconductor layer with a carbon density of 1.0×10 cm or more and a silicon oxide (SiO) layer. The structure includes a crucial carbon-density-decreasing region that enhances the device's performance. Another noteworthy patent involves a method for manufacturing crystals for synthetic gems, which entails creating a SiC single crystal with an n-type impurity and subjecting it to electron beam irradiation. This process effectively generates carbon vacancies within the crystal, optimizing it for gem production.

Career Highlights: Tsunenobu Kimoto has had an illustrious career, working with esteemed organizations such as Sumitomo Electric Industries, Limited and Denso Corporation. His experience at these companies has played a vital role in shaping his expertise and innovative capabilities in semiconductor research.

Collaborations: Throughout his career, Kimoto has collaborated with other renowned experts, including Hiroyuki Matsunami and Shin Harada. Their joint efforts have undoubtedly contributed to the advancement of semiconductor technologies and the enhancement of research methodologies in the field.

Conclusion: Tsunenobu Kimoto's enduring legacy in semiconductor technology is marked by his innovative patents and collaborations. His work continues to influence the future of electronics and materials science, reflecting the passion and dedication he has towards advancing technology in profound ways.

This text is generated by artificial intelligence and may not be accurate.