The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Apr. 11, 2006
Kazuhiro Fujikawa, Osaka, JP;
Shin Harada, Osaka, JP;
Kenichi Hirotsu, Osaka, JP;
Satoshi Hatsukawa, Osaka, JP;
Takashi Hoshino, Osaka, JP;
Hiroyuki Matsunami, Yawata, JP;
Tsunenobu Kimoto, Kyoto, JP;
Kazuhiro Fujikawa, Osaka, JP;
Shin Harada, Osaka, JP;
Kenichi Hirotsu, Osaka, JP;
Satoshi Hatsukawa, Osaka, JP;
Takashi Hoshino, Osaka, JP;
Hiroyuki Matsunami, Yawata, JP;
Tsunenobu Kimoto, Kyoto, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.