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For the Inventor, By the Inventor

Osaka, Japan

Shin Harada

USPTO Granted Patents = 56 

 

Average Co-Inventor Count = 3.2

ph-index = 8

Forward Citations = 196(Granted Patents)

Forward Citations (Not Self Cited) = 188(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Osaka-shi, JP (2010)
  • Hyogo, JP (2019)
  • Itami, JP (2013 - 2021)
  • Osaka, JP (2004 - 2022)

Company Filing History:

goldMedal56 out of 10,250 
 
Sumitomo Electric Industries, Limited
 patents

Years Active: 2004-2022

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Areas of Expertise:
Silicon Carbide Substrate
Crystal Growth Apparatus
Semiconductor Device
Single Crystal Manufacturing
Epitaxial Wafer
MOSFET
Insulated Gate Bipolar Transistor
Field Effect Transistor
Dislocation in SiC
Light-Emitting Device
Vertical Junction Field Effect Transistor
Lateral Junction Field Effect Transistor
56 patents (USPTO):Explore Patents
1. 11242618 - Silicon carbide substrate and method of manufacturing the same (2022-02-08),
2. 11066756 - Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate (2021-07-20),
3. 10741683 - Semiconductor device and method for manufacturing same (2020-08-11),
4. 10724151 - Device of manufacturing silicon carbide single crystal (2020-07-28),
5. 10513799 - Method for manufacturing silicon carbide single crystal (2019-12-24),
6. 10494735 - Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate (2019-12-03),
7. 10361273 - Silicon carbide substrate (2019-07-23),
8. 10319821 - Silicon carbide substrate (2019-06-11),
9. 10246797 - Method for manufacturing silicon carbide single crystal (2019-04-02),
10. 9947782 - Semiconductor device and method for manufacturing same (2018-04-17),
11. 9856583 - Method of manufacturing silicon carbide single crystal (2018-01-02),
12. 9845549 - Method of manufacturing silicon carbide single crystal (2017-12-19),
13. 9583571 - Dislocation in SiC semiconductor substrate (2017-02-28),
14. 9450054 - Dislocation in SiC semiconductor substrate (2016-09-20),
15. 9255344 - Silicon carbide substrate and method of manufacturing the same (2016-02-09),

Title: The Innovative Journey of Shin Harada

Introduction: Shin Harada is a renowned inventor hailing from Osaka, Japan, known for his groundbreaking contributions to various fields through his inventive spirit and dedication to innovation.

Latest Patents: Shin Harada's latest patents include advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to creating a better future through technology.

Career Highlights: With a career spanning over two decades, Shin Harada has established himself as a leading figure in the world of innovation, with numerous successful inventions that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Shin Harada has collaborated with top research institutions, universities, and leading companies to bring his ideas to life and ensure their impact reaches a global scale.

Conclusion: Shin Harada's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, continues to inspire the next generation of inventors and solidify his legacy as a true pioneer in the world of technology.

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