Sumitomo Electric Industries, Limited

National University Corporation Nara Institute of Science and Technology

Shin Harada

Taro Nishiguchi

Makoto Sasaki

Shinsuke Fujiwara

Kazuhiro Fujikawa

Kenichi Hirotsu

Takeyoshi Masuda

Keiji Wada

Tsutomu Hori

Tsunenobu Kimoto

Yasuo Namikawa

Hiroyuki Matsunami

Kyoko Okita

Satoshi Hatsukawa

Takashi Hoshino

Toru Hiyoshi

Misako Honaga

Sho Sasaki

Tomihito Miyazaki

Shunsaku Ueta

Hiroki Inoue

Hideto Tamaso

Tsubasa Honke

Tomoaki Hatayama

Masato Tsumori

Tetsuya Kishida

Satomi Itoh

Naoki Kaji

A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm, a threading screw dislocation density of not more than 1&#xd7;10cm, a threading edge dislocation density of not more than 1&#xd7;10cm, a basal plane dislocation density of not more than 1&#xd7;10cm, a stacking fault density of not more than 0.1 cm, a conductive impurity concentration of not less than 1&#xd7;10cm, a residual impurity concentration of not more than 1&#xd7;10cm, and a secondary phase inclusion density of not more than 1 cm.

Silicon carbide substrate and method of manufacturing the same

A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate

A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

Semiconductor device and method for manufacturing same

A device of manufacturing a silicon carbide single crystal includes a crucible, a first resistive heater, a second resistive heater, and a first support portion. The crucible has a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface. The first resistive heater is disposed to face the bottom surface. The second resistive heater is provided to surround the side surface. The first support portion supports the crucible such that the bottom surface is separated from the first resistive heater, and the side surface is separated from the second resistive heater. The first support portion is in contact with at least one of the top surface and the side surface.

Device of manufacturing silicon carbide single crystal

A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

Method for manufacturing silicon carbide single crystal

A silicon carbide substrate whose majority carrier density is 1&#xd7;10cmor greater is such that a standard deviation of minority carrier lifetime as obtained by &#x3bc;-PCD analysis is 0.7 ns or less in an area other than an area within a distance of 5 mm from an outer perimeter of a main surface.

Silicon carbide substrate

A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 &#x3bc;m or greater. An off angle of the carbon-surface-side principal surface and the silicon-surface-side principal surface relative to a {0001} plane is smaller than or equal to 4&#xb0;. A nitrogen concentration in the carbon-surface-side principal surface is higher than a nitrogen concentration in the silicon-surface-side principal surface, and a difference in Raman peak shift between the carbon-surface-side principal surface and the silicon-surface-side principal surface is smaller than or equal to 0.2 cm.

A method of manufacturing a silicon carbide single crystal includes steps of preparing a crucible, a source material disposed toward a bottom surface in the crucible, a seed crystal disposed to face the source material toward a top surface in the crucible, a resistive heater, and a heat insulator configured to be able to accommodate the crucible therein, measuring a mass of at least a portion of the heat insulator, comparing a measured value of the mass obtained in the measuring step with a threshold value, and growing a silicon carbide single crystal on the seed crystal by sublimation of the source material by heating the crucible placed in the heat insulator with the resistive heater. When the measured value of the mass is lower than the threshold value in the comparing step, the step of growing a silicon carbide single crystal is performed at least one or more times.

Method of manufacturing silicon carbide single crystal

A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mmor less.

A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm&#xd7;1 mm, in any square area, density of dislocations of which Burgers vector is parallel to &#x3c;0001&#x3e; direction is at most 1&#xd7;10cm. Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

Growing community of inventors

Osaka, Japan

Shin Harada