The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Dec. 20, 2010
Shin Harada, Osaka, JP;
Makoto Sasaki, Itami, JP;
Taro Nishiguchi, Itami, JP;
Kyoko Okita, Itami, JP;
Keiji Wada, Osaka, JP;
Tomihito Miyazaki, Osaka, JP;
Shin Harada, Osaka, JP;
Makoto Sasaki, Itami, JP;
Taro Nishiguchi, Itami, JP;
Kyoko Okita, Itami, JP;
Keiji Wada, Osaka, JP;
Tomihito Miyazaki, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.