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For the Inventor, By the Inventor

Itami, Japan

Makoto Sasaki

This inventor holds 23 USPTO granted patents and 2 published patent applications and 5 EPO patents, primarily in Silicon Carbide Technology. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2012-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Makoto Sasaki. Retrieved from https://idiyas.com/inventor/makoto-sasaki-5tlee1h2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 82.6

 

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 122(Granted Patents)


Location History:

  • Osaka, JP (2015)
  • Itami, JP (2012 - 2020)

Company Filing History:

goldMedal23 out of 10,641 
 
Sumitomo Electric Industries, Limited
 patents

Years Active: 2012-2020

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Single Crystal
Epitaxial Wafer
Crystal Ingot
Substrate Fabrication
Thin Film
Manufacturing Method
Light-Emitting Device
Crystal Wafer
Ingot Production
Semiconductor Substrate
23 patents (USPTO):Explore Patents
1. 10741683 - Semiconductor device and method for manufacturing same (2020-08-11),
2. 10427324 - Silicon carbide ingot and method for manufacturing silicon carbide substrate (2019-10-01),
3. 9947782 - Semiconductor device and method for manufacturing same (2018-04-17),
4. 9725823 - Silicon carbide crystal and method of manufacturing silicon carbide crystal (2017-08-08),
5. 9605358 - Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot (2017-03-28),
6. 9546437 - Ingot, silicon carbide substrate, and method for producing ingot (2017-01-17),
7. 9422639 - Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot (2016-08-23),
8. 9090992 - Method of manufacturing single crystal (2015-07-28),
9. 9082621 - Method for manufacturing silicon carbide single crystal, and silicon carbide substrate (2015-07-14),
10. 9070567 - Silicon carbide substrate and method of manufacturing silicon carbide substrate (2015-06-30),
11. 8969103 - Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device (2015-03-03),
12. 8709950 - Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate (2014-04-29),
13. 8642154 - Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot (2014-02-04),
14. 8642153 - Single crystal silicon carbide substrate and method of manufacturing the same (2014-02-04),
15. 8629457 - Light-emitting device (2014-01-14),

Title: Makoto Sasaki: Pioneering Inventor from Itami, Japan

Introduction: Makoto Sasaki is a distinguished inventor hailing from Itami, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Makoto Sasaki holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the tech industry, Makoto Sasaki has worked for leading companies, spearheading research and development projects that have led to significant technological advancements.

Collaborations: Throughout his career, Makoto Sasaki has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Makoto Sasaki's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the world of technology, inspiring future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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