The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jul. 06, 2011
Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device
Applicants:
Makoto Sasaki, Itami, JP;
Shin Harada, Osaka, JP;
Satomi Itoh, Osaka, JP;
Kyoko Okita, Itami, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/049 (2013.01); H01L 29/045 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/1608 (2013.01); Y10S 438/931 (2013.01);
Abstract
A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a <01-10> direction and a <0001> direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.