The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
May. 18, 2012
Tsutomu Hori, Itami, JP;
Makoto Sasaki, Itami, JP;
Taro Nishiguchi, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Tsutomu Hori, Itami, JP;
Makoto Sasaki, Itami, JP;
Taro Nishiguchi, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Sumitomo Electric Insustries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×10atoms/cmand less than or equal to 1×10atoms/cm, a metal atom concentration greater than or equal to 1×10atoms/cmand less than or equal to 1×10atoms/cm, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×10atoms/(cm·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.