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For the Inventor, By the Inventor

Itami, Japan

Tsutomu Hori

This inventor holds 35 USPTO granted patents and 20 published patent applications and 1 EPO patent, primarily in Silicon Carbide Technology. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2014-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsutomu Hori. Retrieved from https://idiyas.com/inventor/tsutomu-hori

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 91.4

 

Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 13(Granted Patents)


Location History:

  • Hyogo, JP (2019 - 2020)
  • Itami, JP (2014 - 2022)
  • Osaka, JP (2022 - 2024)

Company Filing History:

goldMedal35 out of 10,641 
 
Sumitomo Electric Industries, Limited
 patents

Years Active: 2014-2024

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Areas of Expertise:
Silicon Carbide
Epitaxial Substrate
Single Crystal
Crystal Growth
Semiconductor Device
Manufacturing Method
Silicon Carbide Wafer
Ingot Production
Crystal Ingot
Silicon Carbide Substrate
Epitaxial Wafer
Silicon Carbide Device
35 patents (USPTO):Explore Patents
1. 12176399 - Method of manufacturing a silicon carbide epitaxial substrate (2024-12-24),
2. 12125881 - Silicon carbide epitaxial substrate and silicon carbide semiconductor device (2024-10-22),
3. 12020924 - Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device (2024-06-25),
4. 12014924 - Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2024-06-18),
5. 11984480 - Silicon carbide epitaxial substrate (2024-05-14),
6. 11530491 - Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2022-12-20),
7. 11459670 - Silicon carbide epitaxial wafer (2022-10-04),
8. 11066756 - Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate (2021-07-20),
9. 11053607 - Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2021-07-06),
10. 10998406 - Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device (2021-05-04),
11. 10865501 - Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device (2020-12-15),
12. 10825903 - Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2020-11-03),
13. 10811500 - Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2020-10-20),
14. 10724151 - Device of manufacturing silicon carbide single crystal (2020-07-28),
15. 10714572 - Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device (2020-07-14),

Title: Tsutomu Hori: Pioneering Inventor from Itami, Japan

Introduction: Tsutomu Hori is a renowned inventor hailing from Itami, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsutomu Hori holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Tsutomu Hori has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Tsutomu Hori has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Tsutomu Hori's relentless passion for innovation and his pioneering spirit have solidified his reputation as a visionary inventor, shaping the landscape of technology for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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