The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Oct. 03, 2017
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Keiji Wada, Itami, JP;

Tsutomu Hori, Itami, JP;

Hironori Itoh, Itami, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 29/045 (2013.01); H01L 29/78 (2013.01);
Abstract

Assuming that one or more defects satisfying relations of Formula 1 and Formula 2 are first defects, and one or more defects satisfying relations of Formula 3 and Formula 2 are second defects, where an off angle is θ°, the thickness of a silicon carbide layer in a direction perpendicular to a second main surface is W μm, the width of each of the one or more defects in a direction obtained by projecting a direction parallel to an off direction onto the second main surface is L μm, and the width of each of the one or more defects in a direction perpendicular to the off direction and parallel to the second main surface is Y μm, a value obtained by dividing the number of the second defects by the sum of the number of the first defects and the number of the second defects is greater than 0.5.


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