The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

May. 22, 2020
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Tsutomu Hori, Itami, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); C30B 29/36 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/00 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/00 (2013.01); C30B 29/36 (2013.01); H01L 21/02 (2013.01); H01L 21/02002 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 29/045 (2013.01); H01L 29/66068 (2013.01);
Abstract

A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a <11-20> direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.


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