The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Aug. 28, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Tsutomu Hori, Osaka, JP;
Takaya Miyase, Osaka, JP;
Tsubasa Honke, Osaka, JP;
Hirofumi Yamamoto, Osaka, JP;
Kyoko Okita, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A silicon carbide epitaxial wafer includes a single crystal silicon carbide substrate of 4H polytype having a major surface thereof inclined at an angle θ to a {0001} plane toward a <11-20> direction, and a silicon carbide epitaxial layer of a thickness t formed on the major surface, wherein a diameter of the single crystal silicon carbide substrate is greater than or equal to 150 mm, wherein the angle θ exceeds 0°, and is less than or equal to 6°, wherein one or more pairs of a screw dislocation pit and a diagonal line defect situated at a distance of t/tanθ from the pit are present in a surface of the silicon carbide epitaxial layer, and wherein a density of the pairs of a pit and a diagonal line defect is less than or equal to 2 pairs/cm2.