logo

For the Inventor, By the Inventor

Osaka, Japan

Takaya Miyase

This inventor holds 12 USPTO granted patents and 3 published patent applications. Top assignees: Sumitomo Electric Industries, Limited, Mitsumi Electric, Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takaya Miyase. Retrieved from https://idiyas.com/inventor/takaya-miyase

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 75.0

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal11 out of 10,641 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal1 out of 32 
 
Mitsumi Electric, Ltd.
 patents

Years Active: 2020-2026

Loading Chart...
12 patents (USPTO):Explore Patents
1. 12765021 - Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device (2026-10-13),
2. 12727400 - Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device (2026-09-01),
3. 12575152 - Silicon carbide epitaxial substrate and silicon carbide semiconductor device (2026-03-10),
4. 12516443 - Silicon carbide epitaxial substrate (2026-01-06),
5. 12428752 - Silicon carbide epitaxial substrate (2025-09-30),
6. 12176399 - Method of manufacturing a silicon carbide epitaxial substrate (2024-12-24),
7. 12125881 - Silicon carbide epitaxial substrate and silicon carbide semiconductor device (2024-10-22),
8. 12020927 - Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2024-06-25),
9. 12020924 - Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device (2024-06-25),
10. 11735415 - Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2023-08-22),
11. 11459670 - Silicon carbide epitaxial wafer (2022-10-04),
12. 10526699 - Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device (2020-01-07),

Title: Takaya Miyase - Innovative Inventor from Osaka

Introduction: Takaya Miyase is a renowned inventor hailing from Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Takaya Miyase holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancements.

Career Highlights: With a career spanning over two decades, Takaya Miyase has worked with leading research institutions and tech companies, playing a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Takaya Miyase has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the creation of impactful inventions.

Conclusion: Takaya Miyase's passion for innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor, shaping the future of technology and inspiring the next generation of inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…