The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Mar. 15, 2019
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
Sumitomo Electric Industries, Ltd., Osaka, JP;
Takaya Miyase, Osaka, JP;
Tsutomu Hori, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The composite defect includes an extended defect and a basal plane dislocation. The extended defect includes a first region extending in a <11−20> direction from an origin located at a boundary between the silicon carbide substrate and the silicon carbide epitaxial film, and a second region extending along a <1−100> direction. The first region has a width in the <1−100> direction that increases from the origin toward the second region. The basal plane dislocation includes a third region continuous to the origin and extending along the <1−100> direction, and a fourth region extending along a direction intersecting the <1−100> direction. When an area of the main surface is a first area, and an area of a quadrangle circumscribed around the composite defect is a second area, a value obtained by dividing the second area by the first area is not more than 0.001.