Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Abstract

A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. A plurality of square regions are constituted of a plurality of outer peripheral regions located at an outermost periphery of the plurality of square regions and a plurality of central regions surrounded by the plurality of outer peripheral regions. When a maximum value of LTIR of the silicon carbide epitaxial substrate in the plurality of outer peripheral regions is defined as a first value and a maximum value of LTIR of the silicon carbide epitaxial substrate in the plurality of central regions is defined as a second value, a value obtained by dividing the first value by the second value is 0.8 to 1.2. An area density of a pit in a second main surface is 0.5/cmor less.