Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Abstract

A first main surface is a (000-1) plane or a plane inclined by an angle of less than or equal to 8° relative to the (000-1) plane. A reaction chamber has a cross-sectional area of more than or equal to 132 cmand less than or equal to 220 cmin a plane perpendicular to a direction of movement of a mixed gas. When an X axis indicates a first value and a Y axis indicates a second value, the first value and the second value fall within a hexagonal region surrounded by first coordinates, second coordinates, third coordinates, fourth coordinates, fifth coordinates and sixth coordinates in XY plane coordinates, where the first coordinates are (0.038, 0.0019), the second coordinates are (0.069, 0.0028), the third coordinates are (0.177, 0.0032), the fourth coordinates are (0.038, 0.0573), the fifth coordinates are (0.069, 0.0849), and the sixth coordinates are (0.177, 0.0964).