The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
May. 16, 2022
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
Mitsumi Electric Co., Ltd., Tokyo, JP;
Hiroki Nishihara, Osaka, JP;
Tsubasa Honke, Osaka, JP;
Takaya Miyase, Osaka, JP;
Taro Enokizono, Osaka, JP;
MITSUMI ELECTRIC CO., LTD., Tokyo, JP;
Abstract
A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide epitaxial layer is on the silicon carbide substrate. The silicon carbide epitaxial layer has a main surface located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer. An area density of a pit in the main surface is 1/cmor less. An area density of a bump in the main surface is less than 0.7/cm. An area of the pit is 100 μmor less, and an area of the bump is 100 μmor less when viewed in a direction perpendicular to the main surface. A depth of the pit is 0.01 μm to 0.1 μm and a height of the bump is 0.01 μm to 0.1 μm in the direction perpendicular to the main surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile