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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12014924 B1

PDFFull Text
Date of Patent:
Jun. 18, 2024

Filed:

Jun. 14, 2019

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Kenji Kanbara, Osaka, JP;

Hironori Itoh, Osaka, JP;

Tsutomu Hori, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/36 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/78 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/046 (2013.01); H01L 21/78 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01);
Abstract

When a value obtained by dividing the number of the one or more second regions by a total of the number of the one or more first regions and the number of the one or more second regions is defined as a first defect free area ratio, a value obtained by dividing the number of the one or more fourth regions by a total of the number of the one or more third regions and the number of the one or more fourth regions is defined as a second defect free area ratio, and a value obtained by dividing the number of the one or more macroscopic defects by an area of the central region is defined as X cm, A is smaller than B, B is less than or equal to 4, X is more than 0 and less than 4, and a Formula 1 is satisfied.

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