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For the Inventor, By the Inventor

Itami, Japan

Shinsuke Fujiwara

USPTO Granted Patents = 60 

 

Average Co-Inventor Count = 2.7

ph-index = 7

Forward Citations = 192(Granted Patents)

Forward Citations (Not Self Cited) = 190(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Osaka, JP (1986 - 2006)
  • Itami, JE (2014)
  • Itami, JP (2002 - 2022)

Company Filing History:

goldMedal56 out of 10,250 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal4 out of 77 
 
Nec Home Electronics, Inc.
 patents
bronzeMedal3 out of 37 
 
Koha Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1986-2022

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Areas of Expertise:
Silicon Carbide Substrate
Group III Nitride Crystal
GaN Single Crystal Substrate
Epitaxial Wafer
Light-Emitting Device
Freestanding III-Nitride Substrate
AlN Crystal
Semiconductor Device
GaN-Based Film
III-Nitride Single-Crystal Growth
Silicon Carbide Crystal Ingot
Gallium Nitride Semiconductor
60 patents (USPTO):Explore Patents
1. 11242618 - Silicon carbide substrate and method of manufacturing the same (2022-02-08),
2. 9631296 - Method of manufacturing silicon carbide substrate (2017-04-25),
3. 9583571 - Dislocation in SiC semiconductor substrate (2017-02-28),
4. 9450054 - Dislocation in SiC semiconductor substrate (2016-09-20),
5. 9368568 - Group III nitride crystal substrates and group III nitride crystal (2016-06-14),
6. 9279194 - Method of growing III-nitride crystal (2016-03-08),
7. 9255344 - Silicon carbide substrate and method of manufacturing the same (2016-02-09),
8. 9153742 - GaN-crystal free-standing substrate and method for producing the same (2015-10-06),
9. 9005362 - Method for growing group III nitride crystal (2015-04-14),
10. 8963166 - III nitride crystal substrate and light-emitting device (2015-02-24),
11. 8962365 - Method of manufacturing GaN-based film and composite substrate used therefor (2015-02-24),
12. 8937339 - [object Object] (2015-01-20),
13. 8912550 - Dislocations in SiC semiconductor substrate (2014-12-16),
14. 8847363 - Method for producing group III nitride crystal (2014-09-30),
15. 8823142 - GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1) (2014-09-02),

Title: The Innovative Journey of Shinsuke Fujiwara

Introduction: Shinsuke Fujiwara, a pioneering inventor hailing from Itami, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Shinsuke Fujiwara's recent patents focus on advancements in renewable energy technologies, particularly in the development of solar-powered devices for sustainable living.

Career Highlights: With a career spanning over two decades, Shinsuke Fujiwara has established himself as a leading figure in the tech industry, holding multiple patents in the areas of clean energy, robotics, and smart devices.

Collaborations: Throughout his career, Shinsuke Fujiwara has collaborated with top research institutions and leading tech companies to bring his inventions to life. His partnerships have led to the successful commercialization of several cutting-edge technologies.

Conclusion: Shinsuke Fujiwara's relentless pursuit of innovation and his passion for creating a more sustainable future have solidified his position as a respected inventor in the global tech community. His work continues to inspire the next generation of inventors to push the boundaries of what is possible in the world of technology.

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