The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Dec. 21, 2011
Issei Satoh, Itami, JP;
Yuki Seki, Itami, JP;
Koji Uematsu, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Hideki Matsubara, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Masashi Yoshimura, Itami, JP;
Issei Satoh, Itami, JP;
Yuki Seki, Itami, JP;
Koji Uematsu, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Hideki Matsubara, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Masashi Yoshimura, Itami, JP;
Sumitomo Electric Industies, Ltd., Osaka-shi, Osaka, JP;
Abstract
The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.