Osaka, Japan

Hideki Matsubara



Average Co-Inventor Count = 3.4

ph-index = 7

Forward Citations = 410(Granted Patents)


Location History:

  • Hyogo, JP (1997 - 1999)
  • Osaka, JP (2002 - 2013)
  • Itami, JP (2014 - 2015)

Company Filing History:


Years Active: 1997-2015

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20 patents (USPTO):Explore Patents

Title: Innovations of Hideki Matsubara in GaN Technology

Introduction

Hideki Matsubara, an accomplished inventor based in Osaka, Japan, has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride (GaN) materials. With a total of 20 patents to his name, Matsubara's work has paved the way for advancements in film manufacturing techniques that are crucial for modern electronic devices.

Latest Patents

Matsubara's latest innovations focus on improving the method of manufacturing GaN-based films. His patent describes a technique that involves creating a composite substrate, which includes a support substrate that can dissolve in hydrofluoric acid. This method ensures that the coefficient of thermal expansion of the support substrate is well-matched with that of the GaN crystal. By forming a GaN-based film on a main surface of a single crystal film, his techniques allow for the production of films with a larger main surface area, reduced warpage, and enhanced crystallinity. This breakthrough method is essential for enhancing the performance and reliability of high-power electronic devices.

Career Highlights

Throughout his career, Hideki Matsubara has been associated with Sumitomo Electric Industries Limited, where he applied his expertise in semiconductor materials to innovative projects. His dedication to research and development in GaN technology has established him as a respected figure in the industry, with a legacy that extends through his numerous patents.

Collaborations

Matsubara has collaborated with notable colleagues, such as Toshihiko Takebe and Yoshiki Miura, contributing to the collective advancements in semiconductor technologies. Their joint efforts have contributed significantly to the refinement of manufacturing processes, demonstrating the power of collaboration in driving innovation.

Conclusion

Hideki Matsubara's advancements in GaN film manufacturing represent a substantial leap forward in semiconductor technology. With his impressive portfolio of patents and collaborative efforts, he continues to influence the field and inspire future innovations in electronics. As the industry evolves, Matsubara's contributions will undoubtedly play a crucial role in shaping the future of high-performance electronic devices.

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