The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Dec. 06, 2005
Susumu Yoshimoto, Osaka, JP;
Hideki Matsubara, Osaka, JP;
Hirohisa Saitou, Osaka, JP;
Takashi Misaki, Osaka, JP;
Fumitake Nakanishi, Osaka, JP;
Hiroki Mori, Osaka, JP;
Susumu Yoshimoto, Osaka, JP;
Hideki Matsubara, Osaka, JP;
Hirohisa Saitou, Osaka, JP;
Takashi Misaki, Osaka, JP;
Fumitake Nakanishi, Osaka, JP;
Hiroki Mori, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.