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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8937339 B1

PDFFull Text
Expired
Date of Patent:
Jan. 20, 2015

Filed:

Dec. 14, 2012

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Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Issei Satoh, Itami, JP;

Michimasa Miyanaga, Osaka, JP;

Shinsuke Fujiwara, Itami, JP;

Hideaki Nakahata, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Alexander Ghyka

Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/267 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01); C30B 29/38 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C23C 14/06 (2006.01); C23C 14/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); C30B 23/02 (2013.01); C30B 29/36 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/0254 (2013.01); H01L 21/02631 (2013.01); C23C 14/0617 (2013.01); C23C 14/28 (2013.01); H01L 21/02447 (2013.01); H01L 21/02458 (2013.01); H01L 21/0262 (2013.01);
Abstract

SiCAlNcrystals in a mixed crystal state are formed. A method for manufacturing an easily processable SiCAlNsubstrate, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer are provided. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer(0<v<1, 0≦w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrateby a pulsed laser deposition method.

Find Patent Forward Citations

Satoh, Issei. (2015). [object object] (U.S. Patent No. 8937339). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8937339

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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