The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Dec. 14, 2012
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Issei Satoh, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/267 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01); C30B 29/38 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C23C 14/06 (2006.01); C23C 14/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); C30B 23/02 (2013.01); C30B 29/36 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/0254 (2013.01); H01L 21/02631 (2013.01); C23C 14/0617 (2013.01); C23C 14/28 (2013.01); H01L 21/02447 (2013.01); H01L 21/02458 (2013.01); H01L 21/0262 (2013.01);
Abstract
SiCAlNcrystals in a mixed crystal state are formed. A method for manufacturing an easily processable SiCAlNsubstrate, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer are provided. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer(0<v<1, 0≦w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrateby a pulsed laser deposition method.