The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
May. 25, 2011
Yuki Hiromura, Itami, JP;
Koji Uematsu, Itami, JP;
Hiroaki Yoshida, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Yuki Hiromura, Itami, JP;
Koji Uematsu, Itami, JP;
Hiroaki Yoshida, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substratesincluding main surfaceshaving a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substratesso as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substratesoppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystalon the main surfacesof the plurality of tile substrates arranged.