The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 06, 2012
Shin Harada, Osaka, JP;
Shinsuke Fujiwara, Itami, JP;
Taro Nishiguchi, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm, a threading screw dislocation density of not more than 1×10cm, a threading edge dislocation density of not more than 1×10cm, a basal plane dislocation density of not more than 1×10cm, a stacking fault density of not more than 0.1 cm, a conductive impurity concentration of not less than 1×10cm, a residual impurity concentration of not more than 1×10cm, and a secondary phase inclusion density of not more than 1 cm.