The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Dec. 03, 2009
Hiroaki Yoshida, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Koji Uematsu, Itami, JP;
Masanori Morishita, Itami, JP;
Hiroaki Yoshida, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Koji Uematsu, Itami, JP;
Masanori Morishita, Itami, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal () having an alkali-metal atom concentration of less than 1.0×10cm; and a step of growing a second III-nitride crystal () onto a major surface () of the first III-nitride crystal () by HVPE, in an ambient temperature higher than 1100° C.