The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Oct. 02, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); C30B 23/00 (2006.01); C30B 29/36 (2006.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C30B 23/00 (2013.01); C30B 23/02 (2013.01); C30B 29/36 (2013.01); H01L 29/045 (2013.01); H01L 29/32 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01);
Abstract
A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10cm. Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.