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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9368568 B1

PDFFull Text
Date of Patent:
Jun. 14, 2016

Filed:

Aug. 27, 2014

Group iii nitride crystal substrates and group iii nitride crystal

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Koji Uematsu, Itami, JP;

Hideki Osada, Itami, JP;

Seiji Nakahata, Itami, JP;

Shinsuke Fujiwara, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

James W. Judge

Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/04 (2006.01); H01L 21/20 (2006.01); C30B 29/40 (2006.01); C30B 33/06 (2006.01); H01L 21/02 (2006.01); C01B 21/06 (2006.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); C01B 21/0632 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 33/06 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 21/02658 (2013.01); C01P 2002/90 (2013.01); C01P 2006/12 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract

Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×10cmto 4×10cmor a silicon-atom concentration of 6×10cmto 5×10cm, and by having a carrier concentration of 1×10cmto 6×10cm.

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