The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
May. 17, 2012
Tsutomu Hori, Itami, JP;
Makoto Sasaki, Itami, JP;
Taro Nishiguchi, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Tsutomu Hori, Itami, JP;
Makoto Sasaki, Itami, JP;
Taro Nishiguchi, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×10/cm, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.