The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Oct. 14, 2014
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Tsutomu Hori, Itami, JP;

Makoto Sasaki, Itami, JP;

Tsubasa Honke, Itami, JP;

Tomohiro Kawase, Itami, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B28D 5/04 (2006.01); C30B 29/36 (2006.01); B24B 27/06 (2006.01); C30B 23/02 (2006.01); C30B 33/06 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
B28D 5/045 (2013.01); B24B 27/0633 (2013.01); C30B 23/02 (2013.01); C30B 23/025 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); C30B 33/06 (2013.01);
Abstract

A silicon carbide ingot includes an end surface and an end surface opposite to the end surface. In the silicon carbide ingot, the end surface and the end surface face each other in a growth direction, and a gradient of a nitrogen concentration in the growth direction is not less than 1×10cmand not more than 1×10cm.


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