The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Jan. 13, 2011
Applicants:
Taro Nishiguchi, Itami, JP;
Makoto Sasaki, Itami, JP;
Shin Harada, Osaka, JP;
Kyoko Okita, Itami, JP;
Hiroki Inoue, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Yasuo Namikawa, Itami, JP;
Inventors:
Taro Nishiguchi, Itami, JP;
Makoto Sasaki, Itami, JP;
Shin Harada, Osaka, JP;
Kyoko Okita, Itami, JP;
Hiroki Inoue, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Yasuo Namikawa, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
Abstract
A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.