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For the Inventor, By the Inventor

Itami, Japan

Yasuo Namikawa

This inventor holds 19 USPTO granted patents and 4 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: Sumitomo Electric Industries, Limited, International Superconductivity Technology Center, Ishikawajima-Harima Heavy Industries Co., Ltd.. Active years: 1991-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuo Namikawa. Retrieved from https://idiyas.com/inventor/yasuo-namikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 63.2

 

Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 110(Granted Patents)


Location History:

  • Tokyo, JP (1998)
  • Osaka, JP (1991 - 2014)
  • Itami, JP (2013 - 2020)

Company Filing History:

goldMedal19 out of 10,647 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal3 out of 128 
 
International Superconductivity Technology Center
 patents
bronzeMedal2 out of 341 
 
Ishikawajima-Harima Heavy Industries Co., Ltd.
 patents
4. 1 out of 2 
 
International Superconductivity Technology Center, the Juridical
 patents
where one patent can have more than one assignee

Years Active: 1991-2020

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Areas of Expertise:
GaAs Crystal
Lateral Junction Field-Effect Transistor
Silicon Carbide
Light-Emitting Device
Semiconductor Substrate
Heat Treatment
Oxide Crystal
Superconducting Films
II-VI Compound Semiconductors
Crystal Manufacturing
Semiconductor Device
19 patents (USPTO):Explore Patents
1. 10829867 - GaAs crystal (2020-11-10),
2. 10301744 - GaAs crystal (2019-05-28),
3. 8921903 - Lateral junction field-effect transistor (2014-12-30),
4. 8697555 - Method of producing semiconductor device and semiconductor device (2014-04-15),
5. 8643065 - Semiconductor device and method for manufacturing the same (2014-02-04),
6. 8642476 - Method for manufacturing silicon carbide semiconductor device (2014-02-04),
7. 8629457 - Light-emitting device (2014-01-14),
8. 8435866 - Method for manufacturing silicon carbide substrate (2013-05-07),
9. 8168515 - Method for manufacturing semiconductor substrate (2012-05-01),
10. D655256 - Semiconductor substrate (2012-03-06),
11. D651992 - Semiconductor substrate (2012-01-10),
12. D651991 - Semiconductor substrate (2012-01-10),
13. 6881658 - Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process (2005-04-19),
14. 6340535 - Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device (2002-01-22),
15. 5851956 - Method of manufacturing oxide crystal (1998-12-22),

Title: Inventor Yasuo Namikawa

Introduction: Yasuo Namikawa is a renowned inventor based in Itami, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Yasuo Namikawa holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies.

Career Highlights: With a career spanning over two decades, Namikawa has worked with leading research institutions and universities to develop cutting-edge solutions for complex challenges in the tech industry.

Collaborations: Throughout his career, Yasuo Namikawa has collaborated with top companies in Japan and internationally, fostering innovation and pushing the boundaries of technology.

Conclusion: Yasuo Namikawa's passion for innovation and his dedication to pushing the limits of technology have solidified his reputation as a pioneering inventor in the global tech community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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