The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
May. 18, 2001
Applicant:
Inventors:
Yasuo Namikawa, Osaka, JP;
Shinsuke Fujiwara, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/504 ; H01L 2/122 ;
U.S. Cl.
CPC ...
B32B 1/504 ; H01L 2/122 ;
Abstract
This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a light-emitting device using the ZnSe crystal substrate, in particular, the method for the heat treatment of a ZnSe crystal substrate comprising previously forming an Al film on the substrate, first subjecting the substrate to a heat treatment in a Se atmosphere and then subjecting to a heat treatment in a Zn atmosphere.