The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Feb. 25, 2011
Satomi Itoh, Osaka, JP;
Hiromu Shiomi, Osaka, JP;
Yasuo Namikawa, Itami, JP;
Keiji Wada, Osaka, JP;
Mitsuru Shimazu, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Satomi Itoh, Osaka, JP;
Hiromu Shiomi, Osaka, JP;
Yasuo Namikawa, Itami, JP;
Keiji Wada, Osaka, JP;
Mitsuru Shimazu, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.