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For the Inventor, By the Inventor

Osaka, Japan

Hiromu Shiomi

This inventor holds 51 USPTO granted patents and 15 published patent applications and 4 EPO patents, primarily in Silicon Carbide Devices (CPC class H01L). Top assignees: Sumitomo Electric Industries, Limited, Fuji Electric Co., Ltd., Other. Active years: 1991-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiromu Shiomi. Retrieved from https://idiyas.com/inventor/hiromu-shiomi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 51 

% Patents Active = 82.4

 

Average Co-Inventor Count = 2.4

ph-index = 13

Forward Citations = 786(Granted Patents)

Forward Citations (Not Self Cited) = 767(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hyogo, JP (1992 - 2001)
  • Suita, JP (2003 - 2004)
  • Kyoto, JP (2011)
  • Itami, JP (1991 - 2013)
  • Tsukuba, JP (2018 - 2020)
  • Ibaraki, JP (2021)
  • Osaka, JP (2013 - 2022)

Company Filing History:

goldMedal47 out of 10,641 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal1 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents
bronzeMedal5 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1991-2024

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Epitaxial Wafer
Gallium Nitride
Diamond Heat Sink
Micro Mechanical Component
Field Effect Transistor
Electron-Emitting Element
III Nitride
Single Crystal
Bonding Tool
Method of Manufacturing
51 patents (USPTO):Explore Patents
1. 12125881 - Silicon carbide epitaxial substrate and silicon carbide semiconductor device (2024-10-22),
2. 11233125 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2022-01-25),
3. 10903374 - Schottky semiconductor device with junction termination extensions (2021-01-26),
4. 10707299 - Silicon carbide semiconductor device, and method for manufacturing same (2020-07-07),
5. 10453952 - Semiconductor device (2019-10-22),
6. 10424642 - Silicon carbide semiconductor device (2019-09-24),
7. 10062750 - Semiconductor device and method of manufacturing semiconductor device (2018-08-28),
8. 9978840 - Silicon carbide semiconductor device and method for manufacturing the same (2018-05-22),
9. 9954054 - Silicon carbide semiconductor device and method for manufacturing the same (2018-04-24),
10. 9082683 - Method of manufacturing silicon carbide semiconductor device (2015-07-14),
11. 8883619 - Method for manufacturing semiconductor device (2014-11-11),
12. 8877656 - Method for manufacturing silicon carbide semiconductor device (2014-11-04),
13. 8785301 - Method of cleaning silicon carbide semiconductor (2014-07-22),
14. 8652954 - Method for manufacturing silicon carbide semiconductor device (2014-02-18),
15. 8642476 - Method for manufacturing silicon carbide semiconductor device (2014-02-04),

Title: The Innovative Mind of Hiromu Shiomi

Introduction: Hiromu Shiomi is a pioneering inventor hailing from Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiromu Shiomi's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable technology for healthcare monitoring, and sustainable energy solutions for urban environments.

Career Highlights: With a career spanning over two decades, Hiromu Shiomi has established himself as a leading figure in the tech industry. He has worked with top research institutions and multinational companies to bring his innovative ideas to life.

Collaborations: Throughout his career, Hiromu Shiomi has collaborated with renowned engineers, designers, and scientists from around the world. His ability to work in multidisciplinary teams has led to the development of cutting-edge technologies that have revolutionized various sectors.

Conclusion: In conclusion, Hiromu Shiomi's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a visionary inventor in the global landscape of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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