The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

Sep. 08, 2016
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Hiromu Shiomi, Tsukuba, JP;

Hidenori Kitai, Tsukuba, JP;

Hideto Tamaso, Tsukuba, JP;

Kenji Fukuda, Tsukuba, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 29/0634 (2013.01); H01L 29/0638 (2013.01); H01L 29/0696 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66325 (2013.01); H01L 29/66333 (2013.01); H01L 29/66348 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/7396 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7823 (2013.01);
Abstract

The second conductivity type thin film includes: a high-concentration layer having a first impurity concentration; a first electric field relaxing layer continuous to the high-concentration layer at an outer circumference of the high-concentration layer, the first electric field relaxing layer having a second impurity concentration lower than the first impurity concentration; a second electric field relaxing layer continuous to the first electric field relaxing layer at an outer circumference of the first electric field relaxing layer, the second electric field relaxing layer having a third impurity concentration lower than the second impurity concentration; and a first electric field diffusion layer continuous to the second electric field relaxing layer at an outer circumference of the second electric field relaxing layer, the first electric field diffusion layer having a fourth impurity concentration lower than the third impurity concentration.


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