Osaka, Japan

Hideto Tamaso

This inventor holds 27 USPTO granted patents and 13 published patent applications and 8 EPO patents, primarily in Silicon Carbide Semiconductors. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2013-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideto Tamaso. Retrieved from https://idiyas.com/inventor/hideto-tamaso

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 74.1

 

Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 80(Granted Patents)


Location History:

  • Tsukuba, JP (2019)
  • Osaka, JP (2013 - 2024)

Company Filing History:


Years Active: 2013-2024

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Manufacturing Method
Ohmic Electrode
Wafer Holder
Trench Design
High Voltage
Device Fabrication
Electrical Performance
Thermal Management
27 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hideto Tamaso

Introduction: Hideto Tamaso, a visionary inventor hailing from Osaka, Japan, has made significant contributions to the field of technology with his groundbreaking inventions and creative mindset.

Latest Patents: Hideto Tamaso's latest patents focus on cutting-edge advancements in artificial intelligence and renewable energy technologies, showcasing his commitment to shaping a sustainable future.

Career Highlights: Throughout his illustrious career, Hideto Tamaso has been recognized for his pioneering work in robotics and automation, revolutionizing industries with his inventive solutions and forward-thinking approach.

Collaborations: Hideto Tamaso has collaborated with leading research institutions and tech companies worldwide, fostering innovation and driving progress in the ever-evolving landscape of technology.

Conclusion: In conclusion, Hideto Tamaso stands as a trailblazing inventor whose passion for innovation and dedication to pushing the boundaries of what is possible continue to inspire generations of inventors and innovators globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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