The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

Jul. 16, 2014
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Takeyoshi Masuda, Osaka, JP;

Hideto Tamaso, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/049 (2013.01); H01L 21/0475 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01);
Abstract

A silicon carbide semiconductor device includes: a silicon carbide off substrate including a main surface having an off angle relative to a basal plane, the main surface being provided with a trench, the trench having a plurality of side walls and a bottom portion; a gate insulating film covering the side walls and the bottom portion; and a gate electrode provided on the gate insulating film, each of the side walls having an angle of more than 65° and not more than 80° relative to the basal plane in the trench, opening directions of the plurality of side walls being all at a silicon plane side or a carbon plane side.


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