The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jul. 08, 2010
Keiji Wada, Osaka, JP;
Hideto Tamaso, Osaka, JP;
Keiji Wada, Osaka, JP;
Hideto Tamaso, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A semiconductor device having a construction capable of achieving suppressed deterioration of electric characteristics in an insulating member is provided. An nSiC layer, a source contact electrode formed on a main surface of the nSiC layer, a gate electrode arranged at a distance from the source contact electrode on the main surface of the nSiC layer, and an interlayer insulating film located between the source contact electrode and the gate electrode are provided. A rate of lowering in electric resistance in the interlayer insulating film when heating to a temperature not higher than 1200 ° C. is carried out while the source contact electrode and the interlayer insulating film are adjacent to each other is not higher than 5%.