Method for producing silicon carbide semiconductor device and silicon carbide semiconductor device

Abstract

A method for producing a silicon carbide semiconductor device includes preparing a silicon carbide substrate, forming an insulating film on one main surface of the silicon carbide substrate, forming a contact hole in the insulating film and exposing the one main surface of the silicon carbide substrate at a bottom surface of the contact hole, forming an Si film on the bottom surface of the contact hole, forming an Ni film on the Si film, performing a first heat treatment at a first temperature at which Ni and Si react, after the forming of the Ni film, removing an unreacted portion of the Ni film that does not react with the Si film by wet etching after the first heat treatment, and performing a second heat treatment at a second temperature higher than the first temperature after the removing of the unreacted portion.